2sb1260 / 2SB1181 / 2sb1241 transistors power transistor ( ? 80v, ? 1a) 2sb1260 / 2SB1181 / 2sb1241 ! features 1) high breakdown voltage and high current. bv ceo = ? 80v, i c = ? 1a 2) good h fe linearity. 3) low v ce(sat) . 4) complements the 2sd1898 / 2sd1863 / 2sd1733. ! !! ! structure epitaxial planar type pnp silicon transistor ! !! ! external dimensions (units : mm) 2sb1260 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 ? 0.1 +0.2 ? 0.05 +0.1 ? 0.1 +0.2 +0.2 ? 0.1 (3)(2)(1) 4.0 1.0?.2 0.5?.1 2.5 3.0?.2 1.5?.1 1.5?.1 0.4?.1 0.5?.1 0.4?.1 0.4 1.5 4.5 1.6?.1 ?.3 2sb1241 (1) emitter (2) collector (3) base rohm : atv 1.0 6.8?.2 2.5?.2 1.05 0.45?.1 2.54 2.54 0.5?.1 0.9 4.4?.2 14.5?.5 (1) (2) (3) 0.65max. (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2SB1181 ? 0.1 +0.2 ? 0.1 +0.2 +0.3 ? 0.1 2.3 0.22.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 * denotes h fe abbreviated symbol: b e ? ! !! ! absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature *1 single pulse, pw=100ms *2 when mounted on a 40 40 0.7 mm ceramic board. *3 printed circuit board, 1.7mm thick, collector copper plating 100mm 2 or larger. parameter v cbo v ceo v ebo i c p c tj tstg -80 v v v a(dc) w ?c ?c -80 -5 -1 i cp a(pulse)-2 *1 0.5 2 *2 1 *3 10 2sb1260 2sb1241, 2SB1181 2SB1181 150 -55~+150 symbol limits unit w(tc=25?c)
2sb1260 / 2SB1181 / 2sb1241 transistors ! ! ! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) cob min. -80 -80 -5 - - 82 2sb1260, 2SB1181 2sb1241 2sb1260, 2sb1241 2SB1181 - - - - - - - - - - 100 25 - - - -1 -1 390 -0.4 - - vi c =-50 ! ! ! ! packaging specifications and h fe package code taping basic ordering unit (pieces) 2500 2500 1000 pqr h fe 2sb1260 tl - - - qr 2sb1241 pqr 2SB1181 - tv2 - - t100 type h fe values are classified as follows : item p q r h fe 82~180 120~270 180~390 ! ! ! ! electrical characteristic curves fig.1 grounded emitter propagation characteristics 0 -0.1 -1 -100 -1000 base to emitter voltage : v be (v) collector current : i c (ma) -0.8 -1.2 -1.6 -10 -0.2 -0.4 -1.0 -1.4 -0.6 ta=25 ? c v ce =- 5v fig.2 grounded emitter output characteristics 0 0 -0.2 -0.8 -1.0 -0.4 -0.8 -1.2 -1.6 -0.4 -0.6 -2.0 -0.2 -0.6 -1.0 -1.4 -1.8 collector current : i c (ma) collector to emitter voltage : v ce (v) ta=25 ? c -0.05ma i b =0ma -0.1ma -0.15ma -0.2ma -0.25ma -0.3ma -0.35ma -0.4ma -0.45ma fig.3 dc current gain vs. collector current -1 -2 -5 -10 -20 -50-100 -200 -500 -2000 collector current : i c (ma) 10 dc current gain : h fe -1000 20 50 100 200 500 1000 v ce =-3v -1v ta=25 ? c
2sb1260 / 2SB1181 / 2sb1241 transistors fig.4 collector-emitter saturation voltage vs. collector current -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 ta=25 ? c i c /i b =20 -1 -2 -5 -10 -20 -50 -100-200-500 -2000 -1000 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 10 fig.5 gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 emitter current : i e (ma) transition frequency : f t (mhz) ta=25 ? c v ce =- 5v fig.6 collector output capacitance vs. collector-base voltage -0.2 -0.1 -0.5 -1 -2 -5 -10 -20 -50 -100 1 2 5 10 20 50 100 200 500 1000 ta=25 ? c f=1mhz i e =0a collector output capacitance : cob ( pf) collector to base voltage : v cb (v) fig. 7 emitter input capacitance vs. emitter-base voltage -0.1 10 20 -0.2 -0.5 -1 -2 200 1000 -5 -10 500 100 50 ta=25 ? c f=1mhz i c =0a emitter input capacitance : cib (pf) emitter to base voltage : v eb (v) -0.5 -2 -1 -5 -10 -20 -50 -100 fig. 8 safe operating area (2sb1260) collector current : i c (a) collector to emitter voltage : v ce (v) -2 -1 -0.5 -0.2 -0.1 -0.05 ta=25 ? c * single nonrepetitive pulse i c max . (pulse) i c max . p w = 10ms p w =100ms dc fig.9 safe operating area (2sb1241) 12 5 0.1 0.2 0.5 10 20 50 100 200 5001000 collector current : i c (a) collector to emitter voltage : v ce (v) 10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m ta=25 ? c * single nonrepetitive pulse i c max . (pulse) p w =10ms p w =100ms dc * printed circuit board: 1.7 mm thick with collector copper plating at least 1 cm 2 . -0.5 -0.2 -0.1 -1 -2 -20 -10 -5 -50 -100 -0.01 -0.05 -0.02 -0.1 -0.5 -0.2 -1 -5 -2 p w =100ms ta=25 ? c * single nonrepetitive pulse collector current : i c (a) collector to emitter voltage : v ce (v) fig.10 safe operating area (2SB1181)
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